Semiconductor device

Details Semiconductor device Semiconductor device

2007-03-13

2007-03-13

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S365000, C257S393000

Reexamination Certificate

active

11242859

ABSTRACT:
There is provided a semiconductor device in which the thresholds of gate electrodes in transistors can be adjusted together for each of regions having their own functions different from one another. The semiconductor device is provided with: a P-type Si substrate109; a P-type annular well181provided in the element formation surface side of the P-type Si substrate109; and a N-type annular well183provided inside the P-type annular well181. Moreover, an SRAM-P-type well185and an SRAM-N-type well189are provided inside the N-type annular well183. A deep N-type well133is provided nearer to the bottom side of the P-type Si substrate109than the SRAM-P-type well185and the SRAM-N-type well189. A plurality of P-type wells103are provided outside the P-type annular well181, and a N-type101is provided in such a way that the well101encloses the outside faces of the P-type wells103.

REFERENCES:
patent: 6747294 (2004-06-01), Gupta et al.
patent: 6940131 (2005-09-01), Baldwin et al.
patent: 02-283062 (1990-11-01), None
patent: 07-058289 (1995-03-01), None

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