Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-03-06
2007-03-06
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S215000, C257S241000, C257S288000, C257S365000, C257S366000
Reexamination Certificate
active
10221137
ABSTRACT:
In a semiconductor device an electric field is controlled in direction or angle relative to a gate, or a channel to adjust a gain coefficient of a transistor. In some embodiments, there are provided a first gate forming a channel region in a rectangle or a parallelogram, and a second gate forming a channel region substantially containing a triangle between the channel region formed by the first gate and each of a source region and a drain region. In some embodiments, there is included a channel region formed by the first gate that is sandwiched by the channel region formed by the second gate, all the channel regions together substantially forming a rectangle or a parallelogram. As such, a semiconductor device allowing a gain coefficient β of an MOS transistor to be modulated by voltage in an analog manner can readily be produced by conventional processing technology and incorporated into any conventional LSIs configured by a CMOS circuit.
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Exploitation of Next Generation Co., Ltd
Finnegan Henderson Farabow Garrett & Dunner LLP
Louie Wai-Sing
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