1989-12-12
1991-06-11
Sikes, William L.
357 80, H01L 2302, H01L 2312
Patent
active
050237039
ABSTRACT:
A semiconductor device comprising a metal base providing a metal case and a through-passage connecting the inside and outside of said metal case, an electric terminal which provides a bridge selectively deposited on the insulator base allowing formation of conductive layer thereon, said insulator base and said conductive layer and is integrated with said insulator base and is insertingly engaged with the through-passage of said metal base, and a semiconductor element accommodated in said metal case, wherein a pseudo-coaxial line structure is composed of said conductive layer, insulator base, insulator bridge and metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.
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Fukuta Masumi
Hidaka Norio
Yamamura Shigeyuki
Fujitsu Limited
Sikes William L.
Wise Robert E.
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