Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-24

2007-04-24

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular power supply distribution means

C257S208000, C257S350000, C257S357000, C257S347000, C257S331000, C257S401000, C257SE29070, C438S154000, C438S199000, C327S566000, C365S156000

Reexamination Certificate

active

10914128

ABSTRACT:
A semiconductor device includes a substrate having an active layer, an element region provided in the active layer, a P-type semiconductor region provided in the element region, and first and second N-type semiconductor regions provided in the element region, located on the sides of the P-type semiconductor region, respectively and spaced in a first direction. The device has an N-type MOS transistor and first and second P-type MOS transistors. The N-type MOS transistor has a first gate electrode provided on the P-type semiconductor region. The first P-type MOS transistor has a second gate electrode provided on the first N-type semiconductor region. The second P-type MOS transistor has a third gate electrode provided on the second N-type semiconductor region.

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