Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-03

2007-04-03

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE23039, C257S545000

Reexamination Certificate

active

11150491

ABSTRACT:
An island-shaped floating conducting region is provided in a region of the substrate between the adjacent wires on the nitride film, between the adjacent wire on the nitride film and conducting region (the operating region, resistor, or peripheral impurity region), or between the adjacent wire on the nitride film and gate metal layer. The floating conducting region has floating potential and blocks a depletion layer extending from the wire on the nitride film to the substrate. It is therefore possible to prevent leakage of a high frequency signal to the other side through the depletion layer extending from the wire on the substrate to the substrate in a region of the substrate between the adjacent wires on the nitride film, between the adjacent wire on the nitride film and conducting region (the operating region, resistor, peripheral impurity region), or between the adjacent wire on the nitride film and gate metal layer.

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WordNet 2.0, 2003 Princton University. (from http://dictionary.reference.com).

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