Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-07-31
2007-07-31
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S066000, C257S072000
Reexamination Certificate
active
10799325
ABSTRACT:
A semiconductor device can include a channel including a gallium oxide film.
REFERENCES:
patent: 4559238 (1985-12-01), Bujatti et al.
patent: 5107314 (1992-04-01), Kahng et al.
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2003/0104659 (2003-06-01), Arakawak et al.
patent: 2003/0111663 (2003-06-01), Yagi
patent: 2003/0139026 (2003-07-01), Lucovosky
patent: 2003/0180996 (2003-09-01), Yamazaki et al.
patent: 2003/0186489 (2003-10-01), Ishikawa
patent: 2003/0218221 (2003-11-01), Wager, III et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2003/0224550 (2003-12-01), Kokubo et al.
patent: 1134811 (2001-09-01), None
patent: 1 306 858 (2003-05-01), None
patent: 1 367 657 (2003-12-01), None
patent: WO 97-065514 (1997-02-01), None
patent: WO 02/15233 (2002-02-01), None
Aoki, Akira, et al., “Tin Oxide Thin Film Transistors”, Japan J. Appl. Phys., vol. 9, p. 582 (1970).
Carcia, P.F., et al., “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering”, Applied Physics Letters, vol. 82, No. 7, pp. 1117-1119 (Feb. 17, 2003).
Carcia, P.F., et al., “ZnO Thin Film Transistors for Flexible Electronics”, Mat. Res. Soc. Symp. Proc., vol. 769, pp. H72.1-H72.6 (2003).
U.S. Appl. No. 60/490,239, filed Jul. 25, 2003, Transparent Thin Film Transistor with Zinc-Tin Oxide Channel . . . .
U.S. Appl. No. 10/763,239, filed Jan. 26, 2004, Semiconductor Device.
U.S. Appl. No. 10/763,354, filed Jan. 23, 2004, Transistor Including a Deposited Channel Region Having a . . . .
Fu, Shelton, et al., “MOS and MOSFET with Transistion Metal Oxides”, SPIE vol. 2697, pp. 520-527.
Giesbers, J.B., et al., “Dry Etching of All-Oxide Transparent Thin Film Memory Transistors”, Microelectronic Engineering, vol. 35, pp. 71-74 (1997).
Grosse-Holz, K.O., et al. “Semiconductive Behavior of Sb Doped SnO2 Thin Films”, Mat. Res. Soc. Symp. Proc., vol. 401, pp. 67-72 (1996).
Hajnal, Zoltán, et al., “Role of oxygen vacancy defect states in the N-type conduction of B-Ga2O3”, Journal of Applied Physics, vol. 86, No. 7, pp. 3792-3796 (Oct. 1, 1999).
Hajnal, Z., et al., “Theoretical Investigation of the Oxygen Vacancies in B-Ga2O3”, Rapid Research Notes, Phys. Stat. Sol. (a), vol. 171, No. R5 (1999).
Hoffman, R.L., et al., “ZnO-based transparent thin-film transistors”, Applied Physics Letters, vol. 82, No. 5, pp. 733-735 (Feb. 3, 2003).
Masuda, Satoshi, et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, Journal of Applied Physics, vol. 93, No. 3, pp. 1624-1630 (Feb. 1, 2003).
Nakano, Yoshitaka, et al. “Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes”, Applied Physics Letters, vol. 82 No. 15, pp. 2443-2445 (Apr. 14, 2003).
Nishi, Junya, et al., “High Mobility Thin Film Transistors with Transparent ZnO Channels”, Jpn. J. Appl. Phys., vol. 42, Part 2, No. 4A, pp. L347-L349 (Apr. 2003).
Ohya, Yutaka, et al., “Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition”, Jpn. J. Appl. Phys., vol 40, Part 1, No. 1, pp. 297-298 (Jan. 2001).
Orita, Masahiro, et al., Deep-ultraviolet transparent conductive B-Ga2O3 thin films, Applied Physics Letters, vol. 77, No. 25, pp. 4166-4168 (Dec. 18, 2002).
Oritia, Masahiro, et al., “Preparation of highly conductive, deep ultraviolet transparent B-Ga2O3 thin flim at low deposition temperatures”, Thin Solid Films, vol. 411, pp. 134-139 (2002).
Pallecchi, IIaria, et al. “SrTIO3-based metal-insulator-semiconductor heterostructrues” Applied Physics Letters, vol. 78, No. 15, pp. 2244-2246 (Apr. 9, 2001).
Prins, M. W. J., et al., “A ferroelectric transparent thin-film transistor”, Applied Physics Letters, vol. 68, No. 25, pp. 3650-3652 (Jun. 17, 1996).
Seager, C.H., et al., “Charge Trapping and device behavior in ferroelectric memories”, Appl. Phys. Lett., vol. 68, No. 19, pp. 2660-2662 (May 6, 1996).
Ueda, Naoyuki, et al. “Anistrophy of electrical optical properties in BOGa2O3 single crystals”, Appl. Phys. Lett., vol. 71, No. 7, pp. 933-935 (Aug. 18, 1997).
Ueda, Naoyuki, et al., “Systhesis and control of conductiviity of ultraviolet transmitting B-Ga2O3 single crystals”, Appl. Phys. Lett., vol. 70, No. 21, pp. 3561-3563 (Jun. 30, 1997).
Uneno, K., et al. “Field-effect transistor on SrTiO3 with sputtered AI2O3 gate insulator”, Applied Physics Letter, vol. 83, No. 9, pp. 1755-1757 (Sep. 1, 2003).
Wöllensteien, Jürgen, et al., “An isulated gate thin-film transistor using SnO2 as semiconducting channel, a possible new gas sensor device” The 11th European Conference on Solid State Transducers, pp. 471-474 (Sep. 21-24, 1997).
Yoshida, A., “Three Terminal Field Effect Superconducting Device Using SrTiO3 Channel” IEEE Transactions on Applied Superconductivity, vol. 5, No. 2, pp. 2892-2895 (Jun. 1995).
Solid-State Electronics, vol. 7, Pergamon Press, Notes pp. 701-702 (1964).
Anonymous, “Transparent and/or memory thin film transistors in LCD's and PLEAD—” Research Disclosure, p. 890 (Jul. 1998).
Ohta, H., “Frontier of transparent oxide semiconductors”, Solid State Electronics, vol. 47, No. 12, Dec. 2003, pp. 2261-2267.
Ogita, M., “Properties of gallium oxide thin film . . . ”, Proceedings of the 27th annual conf. of the IEEE Ind. Elect. Society, Nov. 29-Dec. 2, 2001, vol. 1 of 3, conf 27, pp. 137-140.
Villora, E.G., et al.. “Infrared Reflectance and Electrical Conductivity of B-GA2O3”, Phys. Stat. Sol. (a), Vo. 193, No. 1, pp. 187-195 (2002).
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3764593