Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-01-23
2007-01-23
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S500000, C257S510000, C438S199000, C438S218000
Reexamination Certificate
active
10950828
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a high voltage region and a low voltage region, at least a pair of adjacent high voltage MOS transistors disposed on the high voltage region of the semiconductor substrate, and low voltage MOS transistors disposed on the low voltage region of the semiconductor substrate. A first element isolator comprises a first shallow trench disposed on a surface of the low voltage, region of the semiconductor substrate, and a first dielectric embedded in the first shallow trench. A pair of second element isolators comprises two second shallow trenches spaced apart at an interval between a source region or a drain region of the pair of the adjacent high voltage MOS transistors and a source or a drain region of the other of the pair of the adjacent high voltage MOS transistors, and a second dielectric embedded in each of the second shallow trenches. The second shallow trenches are disposed on a surface of the high voltage region of the semiconductor substrate. A channel cut region having a high impurity concentration is disposed on the surface of the substrate between the second shallow trenches.
REFERENCES:
patent: 6451640 (2002-09-01), Ichikawa
patent: 6646303 (2003-11-01), Satoh et al.
patent: 2003/0199133 (2003-10-01), Rodder et al.
patent: 2004/0256658 (2004-12-01), Park et al.
patent: 2005/0035394 (2005-02-01), Mori
patent: 2005/0045983 (2005-03-01), Noda et al.
Inoue Naoto
Kim In Ki
Kim Sang Yeon
Paek Min
Sakurai Hitomi
Kalam Abul
Le Thao X.
Seiko Instruments Inc.
Silterra Malaysia Sdh. Bhd
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