Semiconductor device

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C349S039000

Reexamination Certificate

active

11292357

ABSTRACT:
A liquid crystal display device has a plurality of gate bus wirings and source bus wirings on one of paired substrates. Moreover, a inter-layer insulating film made of an organic material is provided on thin film transistors of respective picture elements, and a picture element electrode is provided on the inter-layer insulating film. Furthermore, the liquid crystal display device is provided with an additional capacity common wiring which is provided on the inter-layer insulating film and forms an additional capacity section between the picture element electrode and the additional capacity common wiring. As a result, the liquid crystal display device can realize high quality and a high aperture ratio.

REFERENCES:
patent: 5051570 (1991-09-01), Tsujikawa et al.
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 5159477 (1992-10-01), Shimada et al.
patent: 5182620 (1993-01-01), Shimada et al.
patent: 5317432 (1994-05-01), Ino
patent: 5461501 (1995-10-01), Sato et al.
patent: 5499123 (1996-03-01), Mikoshiba
patent: 5536950 (1996-07-01), Liu et al.
patent: 5585951 (1996-12-01), Noda
patent: 5644370 (1997-07-01), Miyawaki et al.
patent: 5717224 (1998-02-01), Zhang
patent: 5717473 (1998-02-01), Miyawaki
patent: 5721601 (1998-02-01), Yamaji et al.
patent: 5734454 (1998-03-01), Omae et al.
patent: 5745195 (1998-04-01), Zhang
patent: 5767927 (1998-06-01), Jang
patent: 5784131 (1998-07-01), Kim et al.
patent: 5917563 (1999-06-01), Matsushima
patent: 5943107 (1999-08-01), Kadota et al.
patent: 5956105 (1999-09-01), Yamazaki et al.
patent: 6075580 (2000-06-01), Kouchi
patent: 6133967 (2000-10-01), Moon
patent: 6141066 (2000-10-01), Matsushima
patent: 6268894 (2001-07-01), Aoki et al.
patent: 6359665 (2002-03-01), Matsushima
patent: 6800873 (2004-10-01), Zhang
patent: 6806932 (2004-10-01), Matsushima
patent: 1-33833 (1989-07-01), None
patent: 3-288824 (1991-12-01), None
patent: 4-366924 (1992-12-01), None
patent: 5-257164 (1993-10-01), None
patent: 406082826 (1994-03-01), None
patent: 7-104312 (1995-04-01), None
patent: 07-128685 (1995-05-01), None
patent: 7-146491 (1995-06-01), None
patent: 07-159762 (1995-06-01), None
patent: 07-159772 (1995-06-01), None
Japanese Office Action dated Apr. 6, 2004, and translation thereof for Japanese Application 2003-325143.
Japanese Office Action dated Aug. 19, 2003, and translation thereof for Japanese Application 8-102817.
Office Action dated Jun. 1, 2005 in JP 2001-278988 and English-language translation thereof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3749116

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.