Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-05-22
2007-05-22
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C438S232000
Reexamination Certificate
active
10273993
ABSTRACT:
A dose of arsenic for an extension region in an NMOS transistor is in a range from 5×1014to 2×1015ions/cm2and preferably in a range from 1.1×1015to 1.5×1015ions/cm2. Also, in addition to arsenic, a low concentration of phosphorus is doped into the extension region by ion implantation. Consequently, with a semiconductor device of the CMOS structure, it is possible to prevent unwanted creeping of silicide that occurs often in the shallow junction region depending on a concentration of an impurity having a low diffusion coefficient as represented by arsenic. Further, not only can the resistance in the shallow junction region be lowered, but also an amount of overlaps can be optimized in each transistor.
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Coleman W. David
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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