Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-03

2007-04-03

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000

Reexamination Certificate

active

10970027

ABSTRACT:
In a semiconductor device having the upmost wiring layer comprised of aluminum and the wiring layer immediately below it comprised of copper, the upmost wiring layer is made thicker than the wiring layer immediately below it so that the upmost wiring layer is lower in sheet resistance than the wiring layer immediately below it. Multiple ring power lines VR and pads PD are formed of the upmost wiring layer, and the ring power lines VR and the pads PD are connected respectively through power lines VLB1of the upmost wiring layer. Consequently, the voltage drop on the power feed path from the pads PD to the ring power lines VR can be reduced and the power conduction from the pads PD to the ring power lines VR can be stabilized.

REFERENCES:
patent: 6150726 (2000-11-01), Feilchenfeld et al.
patent: 6633082 (2003-10-01), Oda et al.
patent: 6674167 (2004-01-01), Ahn et al.
patent: 6809419 (2004-10-01), Minami et al.
patent: 2000-311964 (2000-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3737796