Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-03

2006-10-03

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S209000

Reexamination Certificate

active

07115966

ABSTRACT:
On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.

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