Semiconductor device

Details Semiconductor device Semiconductor device

2006-08-15

2006-08-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000

Reexamination Certificate

active

07091528

ABSTRACT:
A semiconductor device is provided having an improved breakdown voltage on high power output, the semiconductor device comprising a n-type GaAs subcollector layer, a n-type GaAs intermediate collector layer formed between a collector layer and the subcollector layer, the n-type GaAs collector layer, a p-type GaAs base layer, a n-type InGaP second emitter layer, a n-type GaAs first emitter layer, and a n-type InGaAs emitter contact layer, and a concentration of impurities in the intermediate collector layer is higher than a concentration of impurities in the collector layer and is lower than a concentration of impurities in the subcollector layer.

REFERENCES:
patent: 5106766 (1992-04-01), Lunardi et al.
patent: 5684310 (1997-11-01), Liu
patent: 6531721 (2003-03-01), Burton et al.
patent: 6881988 (2005-04-01), Niwa et al.
patent: 6903388 (2005-06-01), Murayama et al.
patent: 2003/0136956 (2003-07-01), Niwa et al.
patent: 2004/0065897 (2004-04-01), Lee et al.
patent: 1 329 959 (2003-07-01), None
patent: 63-239983 (1988-10-01), None
patent: 5-41388 (1993-02-01), None
patent: 7-161727 (1995-06-01), None
patent: 2001-326231 (2001-11-01), None
patent: 2003-218123 (2003-07-01), None
patent: 98/09335 (1998-03-01), None
Niwa T et al, Institute of Electrical and Electronics Engineers: “A Composite-Collector InGaP/GaAs HBT with High Ruggedness for GSM Power Amplifiers” 2003 IEEE MTT-S International Microwave Symposium Digest. (IMS 2003). Philadelphia, PA, Jun. 8-13, 2003, IEEE MTT-S International Microwave Symposium, New York, NY: IEEE, US, vol. 3 of 3, Jun. 8, 2003, pp. 711-714, XP010645007.
Pfost M et al: “Optimization of the Collector Profile of InGaP/GaAs HBTs for Increased Robustness” IEEE GAAS DIGEST, Nov. 9, 2003, pp. 115-118, XP010673642.
Gao G B et al: “Double-Layer Collector for Heterojunction Bipolar Transistors” Solid State Electronics, Elsevier Science Publishers, Barking, GB, vol. 35, No. 1, Jan. 1992, pp. 57-60, XP000242020.
Lew K L et al: “Effect of composite collector design on the breakdown behavior of InGap/GaAs double heterojunction bipolar transistor” Journal of Applied Physics, American Institute of Physics. New York, US, vol. 93, No. 1, Jan. 1, 2003, pp. 605-610, XP012057716.
Shahidul Hassan M M et al: “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection Through Use of Graded Collector Doping” Microelectronics and Reliability, Pergamon Press. Oxford, GB, vol. 29, No. 2, 1989, pp. 217-226, XP000031158.

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