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365185, 365189, 365176, G11C 700

Patent

active

043685242

ABSTRACT:
A semiconductor device for comprising electrically alterable read-only memories formed in and on the same silicon substrate is disclosed. The read-only memories are driven by both a first voltage having one polarity and a second voltage having the opposite polarity. The first voltage is supplied from an external unipolar voltage source, but the second voltage is generated by a bipolar voltage generator which is located on the same silicon substrate and is driven by said external unipolar voltage source.

REFERENCES:
patent: 3836894 (1974-09-01), Cricchi
patent: 3846768 (1974-11-01), Krick
patent: 3971001 (1976-07-01), Lodi
patent: 4142251 (1979-02-01), Mintz
patent: 4148099 (1979-04-01), Lauffer et al.
patent: 4156940 (1979-05-01), Hollingsworth et al.

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