Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-10-31
2006-10-31
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S616000, C257SE29188, C257SE29193
Reexamination Certificate
active
07129530
ABSTRACT:
A high capacity semiconductor device having a narrowed emitter layer. The semiconductor device includes a collector layer formed on a semiconductor substrate. An SiGe alloy layer is formed on the collector layer. A silicon film is formed on the SiGe layer. An emitter electrode is formed on the silicon film. A side wall film covers the side surface of the emitter electrode. The bottom surface of the emitter electrode is located above the lower surface of the side wall film. Part of the second region of the silicon film is located between the SiGe alloy layer and the side wall film. An impurity region is formed adjacent to the conductive layer. A silicide film is formed along the side surface of the second region, the side surface of the conductive layer, and the surface of the impurity region.
REFERENCES:
patent: 04-179235 (1992-06-01), None
Ibara Yoshikazu
Koide Tatsuhiko
Saito Koichi
Suma Daichi
McDermott Will & Emery LLP
Rodela Eduardo A.
Sanyo Electric Co,. Ltd.
Tran Minhloan
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