Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-11-28
2006-11-28
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S738000, C257S780000, C257S778000, C257S758000
Reexamination Certificate
active
07141879
ABSTRACT:
There is described an improved semiconductor device of chip-scale package (CSP) comprising posts provided on respective electrode pads of a semiconductor chip, and solder balls which are provided on the respective posts as external terminals after the semiconductor chip has been encapsulated with resin while the posts are held in a projecting manner. The semiconductor device prevents occurrence of cracks, which would otherwise be caused by stress which is induced by a difference in coefficient of linear expansion between the semiconductor chip and the sealing resin and is imposed on the posts. In order to alleviate the stress imposed on the posts, a stress-absorbing layer formed from a metal layer having a low Young's modulus, such as gold (Au) or palladium (Pd), is interposed in the middle of each of the posts.
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Wakamiya Keiichiro
Yamada Satoshi
McDermott Will & Emery LLP
Parekh Nitin
Renesas Technology Corp.
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