Semiconductor device

Details Semiconductor device Semiconductor device

2006-11-28

2006-11-28

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S786000, C361S772000, C361S814000

Reexamination Certificate

active

07141876

ABSTRACT:
The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

REFERENCES:
patent: 5880494 (1999-03-01), Watanabe
patent: 6320548 (2001-11-01), Harrell et al.
patent: 6555907 (2003-04-01), Katoh
patent: 6590440 (2003-07-01), Williams et al.
patent: 6693801 (2004-02-01), Otsuka
patent: 6774718 (2004-08-01), Ichitsubo et al.
patent: 2-114561 (1990-04-01), None
patent: 08-250671 (1996-09-01), None
“NET's Special Feature”, Nikkei Electronics, No. 748, Jul. 26, 1999, pp. 140-153 (with English translation).
“GAIN”, No. 131/2000.1, issued by Semiconductor Group of Hitachi, Ltd., 2000 (with English translation).

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