Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-27
2006-06-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S700000, C257S701000, C257S774000, C257S773000
Reexamination Certificate
active
07067919
ABSTRACT:
A semiconductor device including a second insulating film formed on a substantially flat surface, on which a surface of a first wiring and a surface of a first insulating film are continued, to cover the first wiring, a wiring trench formed in the second insulating film, connection holes formed in the second insulating film to extend from the wiring trench to the first wiring, dummy connection holes formed in the second insulating film to extend from the wiring trench to a non-forming region of the first wiring, and a second wiring buried in the connection holes and the wiring trench to be connected electrically to the first wiring and also buried in the dummy connection holes, and formed such that a surface of the second wiring and a surface of the second insulating film constitute a substantially flat surface.
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Chinese Office Action dated Jul. 9, 2004.
Shimizu Noriyoshi
Suzuki Takashi
Watanabe Ken'ichi
Armstrong Kratz Quintos Hanson & Brooks, LLP
Flynn Nathan J.
Forde Remmon R.
Fujitsu Limited
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