Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S072000, C257S059000, C257SE21387, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000

Reexamination Certificate

active

07145174

ABSTRACT:
A semiconductor device can include a channel including a zinc-indium oxide film.

REFERENCES:
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 6083574 (2000-07-01), Asao et al.
patent: 6673643 (2004-01-01), Yamazaki
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 2002/0101557 (2002-08-01), Ono et al.
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2003/0111663 (2003-06-01), Yagi
patent: 2003/0164503 (2003-09-01), Chen
patent: 2003/0178682 (2003-09-01), Noda et al.
patent: 2003/0218221 (2003-11-01), Wager, III et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 2004/0056987 (2004-03-01), Song
patent: 2004/0127038 (2004-07-01), Carcia
patent: 1134811 (2001-09-01), None
patent: 1 443 130 (2004-08-01), None
patent: 1443130 (2004-08-01), None
patent: 2003-086808 (2003-03-01), None
patent: WO 97/06544 (1997-02-01), None
patent: WO 03/010441 (2003-05-01), None
patent: WO 03/040441 (2003-05-01), None
patent: WO 2004/034449 (2004-04-01), None
Aoki, Akira, et al., “Tin Oxide Thin Film Transistors”, Japan J. Appl. Phys., vol. 9, p. 582 (1970).
Carcia, P.F., et al., “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering”. Applied Physics Letters, vol. 82, No. 7, pp. 1117-1119 (Feb. 17, 2003).
Carcia, P.F., et al., “ZnO Thin Film Transistors for Flexible Electronics”, Mat. Res. Soc. Symp. Proc., vol. 769, pp. H72.1-H72.6 (2003).
U.S. Appl. No. 60/490,239, filed Jul. 25, 2003.
U.S. Appl. No. 10/763,353, filed Jan. 23, 2004.
U.S. Appl. No. 10/763,354, filed Jan. 23, 2004.
Fu, Shelton, et al., “MOS and MOSFET with Transistion Metal Oxides”, SPIE vol. 2697, pp. 520-527.
Giesbers, J.B., et al., “Dry Etching of All-Oxide Transparent Thin Film Memory Transistors”, Microelectronic Engineering, vol. 35, pp. 71-74 (1997).
Grosse-Holz, K.O., et al. “Semiconductive Behavior of Sb Doped SnO2 Thin Films”, Mat. Res. Soc. Symp. Proc., vol. 401, pp. 67-72 (1996).
Hoffman, R.L., et al., “ZnO-based transparent thin-film transistors”, Applied Physics Letters, vol. 82, No. 5, pp. 733-735 (Feb. 3, 2003).
Masuda, Satoshi, et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, Journal of Applied Physics, vol. 93, No. 3, pp. 1624-1630 (Feb. 1, 2003).
Nishi, Junya, et al., “High Mobility Thin Film Transistors with Transparent ZnO Channels”, Jpn. J. Appl. Phys., vol. 42, Part 2, No. 4A, pp. L347-L349 (Apr., 2003).
Ohya, Yutaka, et al., “Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition”, Jpn. J. Appl. Phys., vol. 40, Part 1, No. 1, pp. 297-298 (Jan. 2001).
Pallecchi, Ilaria, et al. “SrTIO3-based metal-insulator-semiconductor heterostructures” Applied Physics Letters, vol. 78, No. 15, pp. 2244-2246 (Apr. 9, 2001).
Prins, M. W. J., et al., “A ferroelectric transparent thin-film transistor”, Appl. Phys. Lett., vol. 68, No. 25, pp. 3650-3652 (Jun. 17, 1996).
Seager, C. H., et al., “Charge Trapping and device behavior in ferroelectric memories”, Appl. Phys. Lett., vol. 68, No. 19, pp. 2660-2662 (May 6, 1996).
Uneno, K., et al. “Field-effect transistor on SrTiO3 with sputtered AI2O3 gate insulator”, Applied Physics Letters, vol. 83, No. 9, pp. 1755-1757 (Sep. 1, 2003).
Wöllensteien, Jürgen, et al., “An insulated gate thin-film transistor using SnO2 as semiconducting channel, a possible new gas sensor device” The 11th European Conference on Solid State Transducers, pp. 471-474 (Sep. 21-24, 1997).
Yoshida, A., “Three Terminal Field Effect Superconducting Device Using SrTiO3 Channel” IEEE Transactions on Applied Superconductivity, vol. 5, No. 2, pp. 2892-2895 (Jun., 1995).
Solid-State Electronics, vol. 7, Pergamon Press, Notes pp. 701-702 (1964).
Anonymous, “Transparent and/or memory thin film transistors in LCD's and PLEAD—” Research Disclosure, p. 890 (Jul. 1998).
Ohta, H; “Frontier of transparent oxide semiconductors”; Solid State Electronics, vol. 47, No. 12, Dec. 2003, pp. 2261-2267.
Minami, Tadatsugu; “Transparent and conductive multicomponent oxide films . . . ”; Journal of Vacuum Science & Technology, vol. 17, No. 4, Jul. 1999, pp. 1765-1772.
Hiramatsu, H; “Electrical and Optical Properties . . . ”; Chemistry of Materials, vol. 10, No. 10, Oct. 1998, pp. 3033-3039.
Ohta, H. “Frontier of transparent oxide semiconductors”, Solid State Electronics, vol. 47, No. 12, Dec. 2003, pp. 2261-2267.
Minami, T. “Transparent conductive multicomponent oxides films prepared by magnetron sputtering”, Journal of Vacuum Science & Technology, vol. 17, Jul. 1999, pp. 1765-1772.
Hiramatsu, H., “Electrical and Optical Properties of Radio-Frequency-Sputtered Thin Films of ((ZnO)5In2O3”, Chemistry of Materials, vol. 10, No. 10, Oct. 1998, pp. 3033-3039.
Boesen et al, “ZnO Field-Effect Transistor”, Proceedings of the IEEE, Nov. 1968, pp. 2094-2095, vol. 56, Iss 11, pub IEEE, Dept of Elec. Engrg, Northwestern Univ, Evanston, IL.
Kawasaki et al, “Can ZnO Eat Market in Optoelectronic Applications?”, Extended Abstracts of the 2000 Intl Conf on Solid State Devices & Mtls, Sendai Intl Center, Aug. 29, 2000, pp. 128-129, Japan Society of Applied Physics, IEEE. Electron Devices Society, Japan.
Ohtomo et al, “Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs”, IEICE Trans. Electron, Oct. 2000, pp. 1614-1617, vol. E83-C, No. 10, Institute of Electronics Information and Communication Engineers, Japan.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3689116

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.