Semiconductor device

Details Semiconductor device Semiconductor device

1989-02-21

1990-10-23

James, Andrew J.

Fishing, trapping, and vermin destroying

357 2, 357 67, 437190, H01L 2348

Patent

active

049656562

ABSTRACT:
This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.

REFERENCES:
patent: 4201999 (1980-05-01), Howard et al.
patent: 4350994 (1982-09-01), Perpezko et al.
patent: 4546373 (1985-10-01), Todd et al.
patent: 4668310 (1987-05-01), Kudo et al.
Nouvau Traite de Chemie Minerale Masson et Cie, Paris 1963, p. 814, 1205, 2093, 2094, 2288.
Physical Review B vol. 32 #2 pp. 1363-1365 by Barbour, Jul. 15, 1985.
Applied Physics Letters vol. 22, #2 pp. 81-83 by Kircher, 1/15/73.
Solid State Electronics, vol. 26, #6 pp. 507-513 by Todd et al., 6/27/84.
Journal of Applied Physics, vol. 53 #7, pp. 6186-6190 by Doyle et al., 9/82.
IEEE Electron Device Letters, vol. 6 #8, pp. 437-438 by Remba et al., 8/85.
Buschow et al, "Thermal Stability and Electronic Properties of Amorphous Zr-Co and Zr-Ni Alloys", Phy. Rev. B, vol. 19, #8, Apr. 15, 1979, pp. 3843-3849.

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