Semiconductor device

Details Semiconductor device Semiconductor device

2006-12-19

2006-12-19

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S183000, C257S187000, C257S192000

Reexamination Certificate

active

07151280

ABSTRACT:
A semiconductor device includes a heterojunction semiconductor region9,which forms a heterojunction with a drain region2.The heterojunction semiconductor region9is connected to a source electrode7,and has a band gap different from a band gap of a semiconductor substrate constituting the drain region2.It is possible to set the size of an energy barrier against conduction electrons, which is formed between the drain region2and the heterojunction semiconductor region9,into a desired size by changing the conductivity type or the impurity density of the heterojunction semiconductor region9.This is a characteristic not found in a Schottky junction, in which the size of the energy barrier is inherently determined by a work function of a metal material. It is easy to achieve optimal design of a passive element in response to a withstand voltage system of a MOSFET as a switching element. It is also possible to suppress diffusion potential in a reverse conduction mode and to improve a degree of integration per unit area. As a result, it is possible to reduce the size of elements and to simplify manufacturing processes thereof.

REFERENCES:
patent: 5900648 (1999-05-01), Harris et al.
patent: 2004/0079989 (2004-04-01), Kaneko et al.
patent: 2005/0045892 (2005-03-01), Hayashi et al.
patent: 2005/0062048 (2005-03-01), Hayashi et al.
patent: 2002-299625 (2002-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3683525