Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S759000, C257S760000, C257S528000, C257S520000, C257S530000, C438S622000, C438S623000, C438S133000, C438S132000

Reexamination Certificate

active

07095119

ABSTRACT:
A semiconductor device is equipped with fuses each made of a conductive material vertically extended through an insulator layer employed in the semiconductor device. Holes are formed which vertically penetrate the insulator layer. Sidewalls are formed on their corresponding wall surfaces of the holes. The holes formed with the sidewalls are buried with a conductive material.

REFERENCES:
patent: 6242789 (2001-06-01), Weber et al.
patent: 2002/0086465 (2002-07-01), Houston
patent: 04348517 (1992-12-01), None
patent: 2000-243213 (2000-09-01), None

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