Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-10

2006-10-10

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S221000, C257S288000, C257S240000, C257S297000, C257S489000, C257S490000

Reexamination Certificate

active

07119379

ABSTRACT:
A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region; and a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region.

REFERENCES:
patent: 4792840 (1988-12-01), Nadd
patent: 5804868 (1998-09-01), Kobayashi et al.
patent: 6037632 (2000-03-01), Omura et al.
patent: 6262454 (2001-07-01), Legnani et al.
patent: 6535390 (2003-03-01), Lo
patent: 6680515 (2004-01-01), Hsing
patent: 2003/0209774 (2003-11-01), Jimbo et al.
patent: 2000-294803 (2000-10-01), None

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