Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-02-07
2006-02-07
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S192000, C257S194000
Reexamination Certificate
active
06995397
ABSTRACT:
A semiconductor device having an accumulation channel SiC-MISFET structure includes a p-type SiC layer10formed on an SiC substrate, an n-type channel layer20,a gate insulating film11,a gate electrode12,and n-type source and drain layers13aand13b. The channel layer20includes an undoped layer22and a δ doped layer21which is formed in the vicinity of the lower end of the undoped layer22.Since the channel layer20includes the high-concentration δ doped layer21in its deeper portion, the electric field in the surface region of the channel layer is weakened, thereby allowing the current driving force to increase.
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Kitabatake Makoto
Kusumoto Osamu
Miyanaga Ryoko
Takahashi Kunimasa
Uchida Masao
Flynn Nathan J.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Sefer Ahmad N.
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