Semiconductor device

Details Semiconductor device Semiconductor device

2006-06-27

2006-06-27

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S701000, C257S709000

Reexamination Certificate

active

07067922

ABSTRACT:
Disclosed is a semiconductor device including: a semiconductor substrate; at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends along the four corners; and a second insulating film covering a side face of the entire layer of the first insulating film in the lacking portion on a center side of the semiconductor substrate and having a relative dielectric constant of over 3.8.

REFERENCES:
patent: 5296745 (1994-03-01), Shirai et al.
patent: 6424051 (2002-07-01), Shinogi et al.
patent: 6465112 (2002-10-01), Ikura
patent: 6538301 (2003-03-01), Yamada et al.
patent: 6-188240 (1994-07-01), None
patent: 2000-277465 (2000-10-01), None
patent: 2002-353307 (2002-12-01), None
Notification of the First Office Action issued by the Chinese Paten Office, mailed Dec. 9, 2005, for Chinese Patent Application No. 200410029643.5, and English-language translation thereof.

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