Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-02-21
2006-02-21
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S350000, C257S363000, C257S516000, C257S537000, C257S538000, C438S382000, C438S383000, C438S384000
Reexamination Certificate
active
07002235
ABSTRACT:
A semiconductor device has a semiconductor support substrate, a buried insulation film disposed on the semiconductor support substrate, and a single-crystal silicon active layer disposed on the buried insulation film. The buried insulation film has portions which have been removed so that remaining portions of the buried insulating film form buried insulating film island regions. The single-crystal silicon active layer has portions which have been removed so that remaining portions of the single-crystal silicon active layer form single-crystal silicon active layer island regions defining single-crystal silicon resistors of a resistance circuit.
REFERENCES:
patent: 4950619 (1990-08-01), Yoon et al.
patent: 6229165 (2001-05-01), Sakai et al.
patent: 6747314 (2004-06-01), Sundaresan et al.
Adams & Wilks
Kang Donghee
Seiko Instruments Inc.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3655116