Semiconductor device

Details Semiconductor device Semiconductor device

1980-01-17

1982-11-09

Edlow, Martin H.

357 15, 357 30, 357 23, H01L 4500

Patent

active

043587828

ABSTRACT:
A novel semiconductor device having an oxide semiconductor layer between an amorphous silicon hydride and a metallic layer has been found to have an excellent collection efficiency for light, particularly, in the range of short wavelengths and a high energy conversion efficiency as compared with the conventional Schottky barrier semiconductor device and the semiconductor device having a MIS structure. Further, it has been found that the present novel semiconductor device has an excellent storage stability for a long period of time.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4117506 (1978-09-01), Carlson
patent: 4200473 (1980-04-01), Carlson
patent: 4291318 (1981-09-01), Sansregret
McGill et al., J. Appl. Phys. 50 (1) Jan. 1979, pp. 548-550.

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