Semiconductor device

Details Semiconductor device Semiconductor device

2006-08-01

2006-08-01

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

C257S347000, C257S046000, C257S212000

Reexamination Certificate

active

07084437

ABSTRACT:
Provided is an MRAM memory cell structure capable of preventing generation of parasitic transistors. Diodes are adopted as switching elements of an MRAM memory cell. An n-type semiconductor layer and a p-type semiconductor layer, which collectively constitute a diode, are formed on a surface semiconductor layer of an SOI substrate. The n-type semiconductor layer and the p-type semiconductor layer are disposed in a lateral direction and isolated by an isolation region, whereby the diode is isolated electrically from other elements and from the substrate.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6567299 (2003-05-01), Kunikiyo et al.
patent: 6589180 (2003-07-01), Erikson et al.
patent: 6625057 (2003-09-01), Iwata
patent: 6741495 (2004-05-01), Kunikiyo et al.

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