Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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C257S700000, C257S758000

Reexamination Certificate

active

06998653

ABSTRACT:
A semiconductor device having at least two layers formed on a semiconductor substrate includes a first dielectric layer formed on the semiconductor substrate; a first interconnection layer which is formed on the first dielectric layer and has a first interconnection pattern and a dummy pattern formed around the first interconnection pattern; a second dielectric layer formed on the first interconnection layer; and a second interconnection layer which is formed on the second dielectric layer and has a second interconnection pattern. The dummy pattern is placed in the vicinity of only an area where the first and second interconnection patterns are superposed on each other.

REFERENCES:
patent: 4916514 (1990-04-01), Nowak
patent: 6524933 (2003-02-01), Igarashi
patent: 6751785 (2004-06-01), Oh
patent: 2002/0063335 (2002-05-01), Ozawa et al.
patent: 2002/0081831 (2002-06-01), Igarashi
patent: 02-184035 (1990-07-01), None
patent: 04-093028 (1992-03-01), None
patent: 08-006231 (1996-01-01), None
patent: 09-115905 (1997-05-01), None
patent: 10-335333 (1998-12-01), None

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