Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Reexamination Certificate
2006-06-13
2006-06-13
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
C257S689000, C257S693000, C257S658000, C257S712000
Reexamination Certificate
active
07061090
ABSTRACT:
A semiconductor device comprises a semi-conductor chip bonded on a top surface inside a case electrode by a bonding material and a lead electrode bonded on a top surface of the semiconductor chip by a bonding material with a space of the case electrode filled with an insulating material for sealing the bonded sections, wherein a groove is provided on a top surface of the case electrode from an edge of the semiconductor chip, to thereby reduce heat distortion which is generated on a large scale at an end of the bonding material on account of a difference in coefficients of linear thermal expansion between the semiconductor chip and the case electrode and improve the thermal fatigue life.
REFERENCES:
patent: 5005069 (1991-04-01), Wasmer et al.
patent: 5886403 (1999-03-01), Yoshinaga et al.
patent: 4-229639 (1992-08-01), None
patent: 10-215552 (1998-08-01), None
patent: 11-243165 (1999-09-01), None
Yamazaki Misuk
Yamazaki Tatsuo
Bebremariam Samuel
Loke Steven
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