Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-09

2006-05-09

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S014000, C257S094000, C257S098000, C257S184000

Reexamination Certificate

active

07042014

ABSTRACT:
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

REFERENCES:
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6674778 (2004-01-01), Lin et al.
patent: 2003/0141507 (2003-07-01), Krames et al.
patent: 2004/0062505 (2004-04-01), Sugitatsu et al.
Atsushi Sugitatsu et al.; “Room Temperature Lasing Oscillation Of A Two Dimensional Photonic Crystal Slab With Defect Waveguide By Optical Pump”, 2002 Institute of Electronics, Information, and Communication Engineers (IEICE) Electronics Society Conference pp. 329-330.

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