Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-30

2006-05-30

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000

Reexamination Certificate

active

07053487

ABSTRACT:
A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.

REFERENCES:
patent: 6114243 (2000-09-01), Gupta et al.
patent: 6147402 (2000-11-01), Joshi et al.
patent: 6531780 (2003-03-01), Woo et al.
patent: 2003/0089928 (2003-05-01), Saito et al.
patent: 2003/0109129 (2003-06-01), Saito et al.

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