Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-26

2006-09-26

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to control triggering

C257S262000, C257S362000, C257SE29014

Reexamination Certificate

active

07112828

ABSTRACT:
A semiconductor device that permits an increase in static destruction resistance while preventing an increase in the chip size includes a protective element formed by a polysilicon layer in which JFETs are serially connected in three stages and which is inserted between a gate electrode and source electrode of a power-MOSFET or IGBT semiconductor device. The gate insulation film of a semiconductor active element portion of the semiconductor device is protected regardless of whether the polarity of static electricity or another high voltage is positive or negative.

REFERENCES:
patent: 5005061 (1991-04-01), Robb et al.
patent: 6518815 (2003-02-01), Grimaldi et al.
patent: 6768171 (2004-07-01), Disney
patent: 6777749 (2004-08-01), Rumennik et al.
patent: 2001/0022525 (2001-09-01), Grimaldi et al.
patent: 2003/0168919 (2003-09-01), Friedrichs et al.
patent: 11-289044 (1999-10-01), None
patent: 2000-294778 (2000-10-01), None

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