Semiconductor device

Details Semiconductor device Semiconductor device

2006-03-07

2006-03-07

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257S577000

Reexamination Certificate

active

07009269

ABSTRACT:
In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

REFERENCES:
patent: 6441463 (2002-08-01), Yasuda
patent: 2004/0027753 (2004-02-01), Friedrichs et al.
patent: 6-244413 (1994-09-01), None
patent: 2002-16254 (2002-01-01), None

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