Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-05-30
2006-05-30
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S659000, C257S758000
Reexamination Certificate
active
07053461
ABSTRACT:
A semiconductor device includes: a semiconductor substrate in which a semiconductor element is formed; a multilayer structured wiring layer that is provided on the semiconductor substrate, the wiring layer forming a structure connected with the semiconductor element; a spiral inductor that is formed in at least one layer of the wiring layer; and a connection terminal formed in an uppermost layer of the wiring layer for establishing connection from the wiring layer to an outside such as a printed board. A shielding wiring pattern is disposed between the spiral inductor and the connection terminal, the shielding wiring pattern functioning as an electromagnetic shield for the uppermost layer of the wiring layer. The shielding wiring pattern absorbs a change in electrical field caused by a potential change in the connection terminal, providing a shielding structure which suppresses the superposing of noise and an unnecessary signal onto the spiral inductor from the connection terminal.
REFERENCES:
patent: 5534727 (1996-07-01), Inoue
patent: 6730983 (2004-05-01), Minami
patent: 2004/0222506 (2004-11-01), Wei et al.
patent: 2000-15802 (2000-05-01), None
patent: 2002-246547 (2002-08-01), None
patent: 2003-68862 (2003-03-01), None
Fukui Tsukasa
Ishida Kaoru
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
Quach T. N.
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