Semiconductor device

Details Semiconductor device Semiconductor device

2006-04-04

2006-04-04

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S050000, C257S209000, C257S210000, C257S211000, C257S528000

Reexamination Certificate

active

07023070

ABSTRACT:
The present invention prevents electrostatic discharge damage which may occur when a device chip which has a circuit with fuses mounted thereon is packaged by COG packaging, without increasing an area occupied on the device chip. The height from the chip substrate surface to the top face138bof the chip terminal103bformed on the chip substrate surface136is formed to be higher than the height from the chip substrate surface to the top face138aof the fuse terminal103a. By this, an electrostatic discharge occurs at the chip terminal side when packaged in a COG packaging, so an electrostatic discharge does not occur to the fuse terminal side.

REFERENCES:
patent: 2002/0014680 (2002-02-01), Tottori
patent: 05-218130 (1993-08-01), None
patent: 05-343407 (1993-12-01), None

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