Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-02

2006-05-02

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S438000

Reexamination Certificate

active

07038251

ABSTRACT:
A semiconductor device has a structure reducing resistances to a high frequency current. The semiconductor device includes a semi-insulating substrate, a first n-type layer made of a compound semiconductor, and a first p-type layer made of a compound semiconductor in which a signal current flows in a lateral direction, parallel to the semi-insulating substrate. The first p-type layer is sandwiched between the semi-insulating substrate and the first n-type layer. A second n type layer made of a compound semiconductor is between the semi-insulating substrate and the first p type layer. An alternating current component of the signal current flows through the second n type layer.

REFERENCES:
patent: 6229162 (2001-05-01), Watanabe
Watanabe et al.; “Planar-structure Superlattice APDs”,Technical Report of IEICE, LQE97-79, pp. 69-74 (Oct. 1997).

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