Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257S621000, C257S708000

Reexamination Certificate

active

07112881

ABSTRACT:
A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

REFERENCES:
patent: 6084284 (2000-07-01), Adamic, Jr.
patent: 6646289 (2003-11-01), Badehi
patent: 2002/0151171 (2002-10-01), Furusawa
patent: 2002-512436 (2002-04-01), None
patent: WO 99/40624 (1999-08-01), None
Korean Office Action for Corresponding Korean Patent Application No. 10-2004-76411, Dispatched Feb. 27, 2006.

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