Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2006-05-16
2006-05-16
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C257S178000, C257S584000, C257S751000, C257S753000, C257S763000, C257S765000, C257S766000, C257S770000, C257S771000, C257S779000
Reexamination Certificate
active
07045831
ABSTRACT:
A semiconductor device of the present invention comprises a semiconductor chip, metal layers formed on a first main surface of the semiconductor chip, a first conductive layer layered on a second main surface of the semiconductor chip, consisting of a plurality of conductive films, a second conductive layer layered on the metal layer, having a layered structure consisting of a plurality of conductive films formed in the same order as in the first conductive layer as viewed from the semiconductor chip and a third conductive layer layered on the metal layer, having a layered structure consisting of a plurality of conductive films formed in the same order as in the first conductive layer as viewed from the semiconductor chip. The plurality of conductive films comprise a nickel film and a low contact resistance conductive film having contact resistance with the semiconductor chip which is lower than that of the nickel film. The low contact resistance conductive film and the nickel film are formed in this order from the semiconductor chip. With such a structure, a semiconductor device ensuring simplification of its manufacturing process can be provided.
REFERENCES:
patent: 4560421 (1985-12-01), Maeda et al.
patent: 5027180 (1991-06-01), Nishizawa et al.
patent: 2002-198515 (2002-07-01), None
patent: 2003152175 (2003-05-01), None
patent: 2003-243585 (2003-08-01), None
patent: 2003273346 (2003-09-01), None
Graybill David E.
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
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