Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-05-30
2006-05-30
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S230060, C365S185240
Reexamination Certificate
active
07054200
ABSTRACT:
A semiconductor device to output voltages at three levels to a word driver while alleviating the breakdown voltage in the MOS transistor. This invention is comprised of a breakdown-voltage reducing MOS transistor inserted in the word driver and two NMOS transistors to supply a read-out voltage to a word line. The word driver is moreover controlled by different voltage amplitudes on the main word lines and the common word lines.
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Hanzawa Satoru
Sakata Takeshi
Hitachi , Ltd.
Kenyon & Kenyon
Nguyen Viet Q.
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