Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-09-05
2006-09-05
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07102169
ABSTRACT:
A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulting film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively and waveform rounding of an applied high-frequency signal can be reduced without increasing the number of manufacturing steps.
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Office Action (U.S. Appl. No. 10/620,565 filed Jul. 17, 2003); Mar. 31, 2005; 14 pages.
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Koyama Jun
Ogata Yasushi
Ohtani Hisashi
Yamazaki Shunpei
Fish & Richardson P.C.
Rose Kiesha
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra V.
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