Semiconductor device

Details Semiconductor device Semiconductor device

2005-06-07

2005-06-07

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000

Reexamination Certificate

active

06903387

ABSTRACT:
A semiconductor device having a heterojunction bipolar transistor capable of suppressing the deterioration of basic transistor characteristics, such as a decline of an injection efficiency from an emitter layer to a base layer due to the rising of emitter resistance, a decline of breakdown strength between the base layer and a collector layer, or a decline of reliability due to an introduction of a defect; configured to comprise a heterojunction bipolar transistor having an emitter layer, base layer and a collector layer, wherein an electron affinity of the base layer is smaller than that of the emitter layer and that of the collector layer, an interlayer is formed at least either between the emitter layer and the base layer or between the base layer and the collector layer, and the electron affinity of the interlayer has a value between the electron affinities of the two layers sandwiching the interlayer.

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