Semiconductor device

Details Semiconductor device Semiconductor device

2005-12-06

2005-12-06

Nguyen, Long (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

C327S077000, C327S427000, C327S066000

Reissue Patent

active

RE038907

ABSTRACT:
The differential amplifier of a comparator circuit includes first and second n-type MOSFETs for receiving an input signal, first and second p-type MOSFETs of a current mirror circuit, and a third n-type MOSFET of a current source circuit. The output stage includes a third p-type MOSFET for transmitting a signal, and a fourth n-type MOSFET of the current source circuit. The differential amplifier further includes fifth and sixth n-type MOSFETs respectively series-connected to the first and second n-type MOSFETs. The output stage further includes a seventh n-type MOSFET series-connected to the fourth n-type MOSFET. The gates of the fifth, sixth, and seventh n-type MOSFETs are connected to voltage bias circuits. The fifth, sixth, and seventh n-type MOSFETs suppress variations in voltage at an output node caused by poor saturation characteristics of the first, second, and fourth main n-type MOSFETs.

REFERENCES:
patent: 4893090 (1990-01-01), Boudewijns
patent: 5030585 (1991-07-01), Gonzalez et al.
patent: 5242844 (1993-09-01), Hayashi
patent: 5422593 (1995-06-01), Fujihira
patent: 5446418 (1995-08-01), Hara et al.
patent: 5748025 (1998-05-01), Ng et al.
patent: 5798660 (1998-08-01), Cheng
patent: 6002290 (1999-12-01), Avery et al.
patent: 6124741 (2000-09-01), Arcus
patent: 6177818 (2001-01-01), Bertin et al.
patent: 6-204478 (1994-07-01), None
patent: 7-86601 (1995-03-01), None
patent: 8-316472 (1996-11-01), None
W. Wondrak et al., “Poly-Silicone Logic For Integration of Drive, Sense and Protection Functions in Discrete Power Devices”, Proceedings of 1998 International Symposium on Power Semiconductor Devices & Ics, Kyoto, Jun. 1998, pp. 371-374.
Tomoko Matsudai, et al., “Electrical Characteristics of Polysilicon CMOS Analog and Driver Circuits for Intelligent IGBTs”, Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, Tokyo, Sep. 1999, pp. 94-95.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3506291