Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Reexamination Certificate

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Details

C257S396000, C257S397000, C257S409000, C257S452000, C257S484000, C257S490000, C257S495000

Reexamination Certificate

active

06906355

ABSTRACT:
A semiconductor device having guard grooves uniformly filled with a semiconductor filler is provided. The four corners of a rectangular ring-shaped guard groove meet at right angles, and outer and inner auxiliary diffusion regions both rounded are connected to the four corners. Since the guard grooves do not have to be rounded, the plane orientation of a silicon single crystal exposed inside the guard grooves can be all {100}. Therefore, epitaxial growth in the guard grooves is uniformly carried out, and the grooves are filled with guard regions without defects.

REFERENCES:
patent: 3898684 (1975-08-01), Davidsohn
patent: 5670821 (1997-09-01), Bowers
patent: 6768138 (2004-07-01), Kitada et al.
patent: 2003/0160262 (2003-08-01), Kitada et al.

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