Semiconductor device

Details Semiconductor device Semiconductor device

2005-08-23

2005-08-23

Zweizig, Jeffrey (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

Reexamination Certificate

active

06933765

ABSTRACT:
A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC1) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC2) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2×VDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB1), the level converter circuit (LSC2) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals.

REFERENCES:
patent: 6011421 (2000-01-01), Jung
patent: 6043699 (2000-03-01), Shimizu
patent: 63-69455 (1986-09-01), None
patent: 63-299409 (1987-05-01), None
patent: 3-273594 (1990-06-01), None
patent: 6-90161 (1992-09-01), None
patent: 11-27137 (1997-06-01), None
patent: 11-195975 (1997-12-01), None
Kiyoo Itoh, “VLSI Memory Chip Design” and translation, Advanced Microelectronics, 2001, pp. 88-89.

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