Semiconductor device

Details Semiconductor device Semiconductor device

1991-08-28

1994-02-08

Davie, James W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase current gain or operating frequency

257585, H01L 2972

Patent

active

052851010

ABSTRACT:
A semiconductor device has an active region composed of an impurity diffused region formed in a substrate. The impurity diffused region is divided into a plurality of impurity diffused sub-regions formed separately from each other in the substrate but electrically coupled to each other.

REFERENCES:
patent: 3958267 (1976-05-01), Frederiksen et al.
patent: 4202005 (1980-05-01), Sanders
patent: 5109262 (1992-04-01), Kadota et al.
patent: 5153694 (1992-10-01), Kishi
European Search Report for Application No. EP91307871 and Annex thereto, no date.
Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Sep. 12, 1988, Minneapolis, Minn., pp. 199-201; Lj. Ristic et al., "A CMOS bipolar transistor with a locally doped base in the proximity of the emitter as a magnetic field sensor".
Patent Abstracts of Japan, vol. 11, No. 257 (E-534), Aug. 20, 1987, & JP-A-62066672 (Sharp Corp.), Mar. 26, 1987.
Diffusion-Induced Defects in Silicon.I, by E. Levine et al., Journal of Applied Physics, vol. 38, No. 1, pp. 81-87 (Jan. 1967).

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