Semiconductor device

Details Semiconductor device Semiconductor device

2005-06-14

2005-06-14

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S757000, C257S763000, C257S764000, C257S765000, C257S766000, C257S767000, C257S768000, C257S770000, C438S652000, C438S683000

Reexamination Certificate

active

06906420

ABSTRACT:
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor film, an opening being formed in the insulating film; and a second conductor film, which is formed within the opening of the insulating film and is in electrical contact with the first conductor film. The second conductor film includes: a silicon-containing titanium nitride layer formed within the opening of the insulating film; and a metal layer formed over the silicon-containing titanium nitride layer. The metal layer is mainly composed of copper.

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