Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-04-28
1998-11-03
Guay, John F.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 18, 257 20, 257 24, 257190, H01L 29778
Patent
active
058312960
ABSTRACT:
Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.
REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4663643 (1987-05-01), Mimura
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4797716 (1989-01-01), Chaffin et al.
T.E. Zipperian, et al., "An In.sub.0.2 Ga.sub.0.8 As/GaAs, Modulation-Doped, Strained-layer Superlattice Filed-Effect Transistor", Electron Devices Meeting, Dec. 1983, pp. 696-699.
Japanese Journal of Applied Physics, Inoue, et al, Extended Abstracts of the 31st Spring Meeing, 1984, p. 538, lines 5-12.
Japanese Journal of Applied Physics, Inoue, et al, Extended Abstracts of the 31st Spring Meeting, 1984, p. 538, lines 1-3.
Inoue, et al "A New High-Conductive (AlGa) As/GaAs/(AlGa) As Selectively-Doped . . . " in Japanese Journal of Applied Physics, vol. 23, No. 2, Feb. 1984, pp. 161-163.
"A New High-Electron Mobility Monolayer Superlattice", Japanese Journal of Applied Physics, vol. 22, No. 11, 1983, ppL680-L682 by Yao.
"MBE growth and characterization of InGaAs/GaAs strained layer superlattices", Inst. Phys. Conf. Ser. No. 65, Chapter 4, 1982, pp. 241-247 by Fritz, et al.
Kuroda Takao
Shiraki Yasuhiro
Guay John F.
Hitachi , Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-692336