Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-05-31
2005-05-31
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257S057000
Reexamination Certificate
active
06900463
ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element ray be formed.
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Notice of Motion and SEL's Motion for Partial Summary Judgment on Defenses of Defendants; Memorandum of Points and Authorities (Redacted Version), Jul. 9, 2003.
Declaration of Stanley A. Schlitter (Schlitter Declaration) in Support of SEL's Two Motions for Partial Summary Judgment (Redacted Version), with Exhibits, Jul. 9, 2003.
Exhibit 3 of Schlitter Declaration,Copy of AU Optronics' Answer to SEL's First Amended Complaint and Counterclaims.
Exhibit 4 of Schlitter Declaration,Copy of U.S. Patent No. 6,355,941(“the '941 Patent”).
Exhibit 5 of Schlitter Declaration,Copy of Expert Witness Report of Richard A. Killworth.
Exhibit 7 of Schlitter Declaration,Copy of U.S. Patent 6,404,480(“the '480 Patent”).
Exhibit 8 of Schlitter Declaration,Copy of Manual of Patent Examining Procedure(MPEP), § 1302.12.
Exhibit 9 of Schlitter Declaration,Copy of the May 28, 1998 IDS Form from the '941 Patent Application.
Exhibit 10 of Schlitter Declaration,Copy of the Specification and Claims for application Ser. No. 08/104,264(“the '264 Application”).
Exhibit 11 of Schlitter Declaration,Copy of the Jan. 14, 1999 Office Action from the '264 Application.
Exhibit 12 of Schlitter Declaration,Copy of the Apr. 2, 1998 Office Action from the '941 Patent Application.
Exhibit 13 of Schlitter Declaration,Copy of the Apr. 17, 1998 Notice of Appeal from the '941 Patent Application.
Exhibit 14 of Schlitter Declaration,Copy of the Jun. 25, 1999 Order Remanding to Examiner from the '941 Patent Application.
Exhibit 15 of Schlitter Declaration,Copy of the May 28, 1998 IDS Form, Signed and Dated by the Examiner(With Lines Drawn Through the References),from the '941 Patent Application.
Exhibit 16 of Schlitter Declaration,Copy of the May 28, 1998 IDS Form, Signed and Dated by the Examiner(Without Lines Drawn Through References),from the '941 Patent Application.
Exhibit 17 of Schlitter Declaration,Copy of the May 23, 2001 Board of Patent Appeals' Decision on Appeal from the '941 Patent Application.
Exhibit 18 of Schlitter Declaration,Copy of the Sep. 10, 2001 Notice of Allowability from the '941 Patent Application.
Exhibit 19 of Schlitter Declaration,Copy of MPEG § 1214.04.
Exhibit 20 of Schlitter Declaration,Copy of the Deposition Transcript ofRichard A. Killworth.
Exhibit 21 of Schlitter Declaration,Copy of the Specification and Claims of application Ser. No. 06/278,418(“the '418 Application ”).
Ehibit 22 of Schlitter Declaration, Copy of U.S. Patent No. 5,929,527l (“the '527 Patent”).
Exhibit 23 of Schlitter Declaration,Copy of SEL's Original Complaint for Patent Infringementdated Jun. 11, 2002.
Exhibit 24 of Schlitter Declaration,Copy of the April 28, 1998 Amendment from the '264 Application(Filed Under Seal, Copy Not Provided).
Exhibit 25 of Schlitter Declaration,Copy of Selections from the '941 Patent Application File History.
Exhibit 26 of Schlitter Declaration, Copy of U.S. Patent No. 5,591,987 (“the '987 Patent”).
Exhibit 27 of Schlitter Declaration, Copy of U.S. Patent No. 5,262,350 (“the '350 Patent”).
Exhibit 28 of Schlitter Decelartion,Copy of Selections from the File Histories of the '418, '767, '705, '102, '167, and '548 Patent Applications.
Exhibit 44 of Schlitter Declaration, Copy of U.S. Patent No. 5,859,443.
Exhibit 45 of Schlitter Declaration,Copy of the Deposition Transcript of Shumpei (sic) Yamazaki [Redacted Version,pp. 2-43, 63-65, and 69-111].
Exhibit 46 of Schlitter Declaration,Copy of U.S. patent application No. 09/046,685, which Issued as the '471 Patent and which was the Parent Application to the one that Issued as the '480 Patent.
Exhibit 47 of Schlitter Declaration,Copy of a Request for Drawings Made by Counsel for SEL to Quinn Patent Drawing Service and the Resulting Drawings from the '471 Patent Applications.
Exhibit 48 of Schlitter Declaration, Copy of U.S. patent application No. 09/734,177, which Led to the Issuance of the '480 Patent.
Exhibit 49 of Schlitter Declaration,Copy of a Verified Translation of a Japanese Priority Document from the '480 Patent Application.
Exhibit 51 of Schlitter Declaration,Copy of Exhibit 3 from the Deposition of Shumpei (sic) Yamazaki.
AU Optronics Corporation's and Acer and Acer America's Opposition to SEL's Motion for Partial Summary Judgment on Defenses of Defendant; Memorandum of Points and Authorities in Support Thereof, Jul. 24, 2003.
Declaration of Minda R. Schechter (Schechter Declaration) in Support of AU Optronics Corporation's and Acer and Acer America's Opposition to SEL's Motion for Partial Summary Judgment on Defenses of Defendants, with Exhibits, Jul. 24, 2003.
Exhibit 1 of Schechter
Nagata Yujiro
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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