Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-11-15
2005-11-15
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S676000, C257S695000, C257S724000, C257S735000, C257S787000, C257S684000, C257S777000
Reexamination Certificate
active
06965154
ABSTRACT:
A semiconductor device and a manufacturing method thereof are provided with downsizing and densification achieved by reducing the thickness of the semiconductor device without increase in area. Terminal electrodes are arranged, in plan view, outside a region where semiconductor chips are arranged. A lower semiconductor chip is placed to overlap in the range of height with the terminal electrodes, an upper semiconductor chip is placed above the lower semiconductor chip, a wire connects the upper and lower semiconductor chips to the terminal electrodes, and an encapsulating resin encapsulates the upper and lower semiconductor chips and wire. The encapsulating resin has its bottom surface coplanar with the bottom surface of the terminal electrodes.
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Abe Shun-ichi
Izumi Naoki
Uebayashi Tetsuya
Yamazaki Akira
Graybill David E.
Leydig , Voit & Mayer, Ltd.
Renesas Technology Corp.
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