Semiconductor device

Details Semiconductor device Semiconductor device

2005-11-01

2005-11-01

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S264000, C257S272000, C257S277000, C438S189000, C438S190000, C438S309000

Reexamination Certificate

active

06960797

ABSTRACT:
The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 Ω·cm.

REFERENCES:
patent: 5254864 (1993-10-01), Ogawa
patent: 5273912 (1993-12-01), Hikida
patent: 5605851 (1997-02-01), Palmieri et al.
patent: 5670819 (1997-09-01), Yamaguchi
patent: 5804476 (1998-09-01), Jang
patent: 6555857 (2003-04-01), Okawa et al.
patent: 2 243 485 (1991-10-01), None
patent: 58-197885 (1983-11-01), None
patent: 61-160963 (1986-07-01), None
patent: 61-242059 (1986-10-01), None
patent: 62-229869 (1987-10-01), None

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